IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

                            IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

                            IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

                            IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

                            IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

IC silicon wafer 3-12 inch Mono P-type SSP Silicon Wafer

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Description

Place of Origin:
Shanghai, China
Brand Name:
Pannersi
Model Number:
Pm20160220
Name:
IC silicon wafer 4 inch Mono P-type SSP Silicon Wafer
Growth Method:
CZ
Type:
P-type
Dophant:
Boron
Diameter:
100±0.4mm
Thickness:
525+/-25um
Orientation:
100
Resistivity:
1-20 Ohm
Surface:
SSP (Single side polished)
Flat:
1 or 2 flats(semi standard)
{1}{2}{3}